We present optical spectroscopy (photoluminescence and reﬂectance) studies of thin layers of the transition metal dichalcogenide WSe2, with thickness ranging from mono- to tetra-layer and in the bulk limit. The investigated spectra show the evolution of excitonic resonances as a function of layer thickness, due to changes in the band structure and, importantly, due to modiﬁcations of the strength of Coulomb interactions as well. The observed temperature-activated energy shift and broadening of the fundamental direct exciton are well accounted for by standard formalisms used for conventional semiconductors. A large increase of the photoluminescence yield with temperature is observed in a WSe2 monolayer, indicating the existence of competing radiative channels. The observation of absorption-type resonances due to both neutral and charged excitons in the WSe2 monolayer is reported and the eﬀect of the transfer of oscillator strength from charged to neutral excitons upon an increase of temperature is demonstrated.